MTDN8233CDV8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – Common Drain Dual N -Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C911V8
Issued Date : 2013.12.02
Revised Date :
Page No. : 1/9
Common Drain Dual N -Channel Enhancement Mode MOSFET
MTDN8233CDV8
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• ESD protected
• Pb-free lead plating and halogen-free package
BVDSS
ID
RDSON (TYP.)
VGS=4.5V
VGS=4.5V, ID=5.5A
VGS=4.0V, ID=5.5A
VGS=3.7V, ID=5.5A
VGS=3.1V, ID=5.5A
VGS=2.5V, ID=5.5A
20V
10A
8.1mΩ
8.4mΩ
8.6 mΩ
9.4 mΩ
10.5 mΩ
Equivalent Circuit
MTDN8233CDV8
Outline
Pin 1
DFN3×3
G：Gate S：Source D：Drain
Ordering Information
Device
MTDN8233CDV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDN8233CDV8
CYStek Product Specification