MTDN7002ZHS6R Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-CHANNEL MOSFET (dual transistors)

CYStech Electronics Corp.
N-CHANNEL MOSFET (dual transistors)
MTDN7002ZHS6R
Spec. No. : C320S6R
Issued Date : 2007.11.07
Revised Date :
Page No. : 1/ 7
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(4V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Equivalent Circuit
MTDN7002ZHS6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
Continuous
ID
Pulsed
IDP
Drain Reverse Current
Continuous
IDR
Pulsed
IDRP
Power Dissipation
Pd
ESD susceptibility
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Pulse test, pulse width≤300μs, duty≤2%
2. 200mW per element must not be exceeded.
3. Human body model, 1.5kΩ in series with 100pF
Limits
Unit
60
V
±20
V
115
mA
700 (Note 1)
mA
115
mA
700 (Note 1)
mA
300(total) (Note 2)
mW
1250 (Note 3)
V
150
°C
-55~+150
°C
MTDN7002ZHS6R
CYStek Product Specification