MTDN6303S6R Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-CHANNEL MOSFET (dual transistors)

CYStech Electronics Corp.
Spec. No. : C814S6R
Issued Date : 2012.05.15
Revised Date : 2014.04.15
Page No. : 1/ 8
N-CHANNEL MOSFET (dual transistors)
MTDN6303S6R
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(1.8V)
• Pb-free lead plating and halogen-free package
BVDSS
ID
RDSON@VGS=4.5V, ID=600mA
RDSON@VGS=2.5V, ID=400mA
RDSON@VGS=1.8V, ID=350mA
20V
760mA
370mΩ(typ)
500mΩ(typ)
1.1Ω (typ)
Equivalent Circuit
MTDN6303S6R
Outline
SOT-363
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation ^TA=25℃
(Note 3)
TA=85℃
ESD susceptibility
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
Unit
20
±8
V
760
550
mA
3
A
300
mW
160
2000 (Note 4)
V
-55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3.Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
4.Human body model, 1.5kΩ in series with 100pF
MTDN6303S6R
CYStek Product Specification