MTDN5820Z6 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – 20V Common Drain Dual N -Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C911Z6
Issued Date : 2013.11.28
Revised Date :
Page No. : 1/9
20V Common Drain Dual N -Channel Enhancement Mode MOSFET
MTDN5820Z6 ^BVDSS
20V
ID
VGS=4.5V
11A
VGS=4.5V, ID=5.5A
6.0mΩ
VGS=4.0V, ID=5.5A
6.0mΩ
RDSON (TYP.) VGS=3.7V, ID=5.5A
6.2 mΩ
VGS=3.1V, ID=5.5A
6.7 mΩ
Description
VGS=2.5V, ID=5.5A
7.8 mΩ
The MTDN5820Z6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×5-6L
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TDFN2×5-6L package is universally preferred for all commercial-industrial surface mount
applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• ESD protected
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTDN5280Z6
Outline
TDFN2×5-6L
G：Gate S：Source D：Drain
MTDN5820Z6
CYStek Product Specification