MTDK5S6R Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – ESD protected Dual N-CHANNEL MOSFET

CYStech Electronics Corp.
Spec. No. : C800S6R
Issued Date : 2010.03.29
Revised Date : 2013.03.28
Page No. : 1/7
ESD protected Dual N-CHANNEL MOSFET
MTDK5S6R
BVDSS
ID
RDSON(TYP)
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
30V
250mA
1.3Ω
2.7Ω
Description
• Low voltage drive(2.5V drive) makes this device ideal for portable equipment.
• The MOSFET elements are independent, eliminating mutual interference.
• Mounting cost and area can be cut in half.
• High speed switching
• ESD protected device
• Pb-free lead plating & halogen-free package
Symbol
MTDK5S6R
Outline
SOT-363
Tr1
Tr 2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
BVDSS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current (Ta=25°C)
IDM
Total Power Dissipation
PD
ESD susceptibility
Operating Junction and Storage Temperature Range
Tj ; Tstg
Thermal Resistance, Junction-to-Ambient
Rth,ja
Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1%
*2. With each pin mounted on the recommended lands.
*3. Human body model, 1.5kΩ in series with 100pF
Limits
30
±20
±250
±800 *1
200 *2
1550 *3
-55~+150
625
Unit
V
V
mA
mA
mW
V
°C
°C/W
MTDK5S6R
CYStek Product Specification