MTDK3S6R Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – ESD protected N-CHANNEL MOSFET

CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET
MTDK3S6R
BVDSS
ID
RDSON
Spec. No. : C447S6R
Issued Date : 2009.06.03
Revised Date :
Page No. : 1/6
20V
100mA
3Ω
Description
• Low voltage drive, 1.8V
• Easy to use in parallel
• High speed switching
• ESD protected device
• Pb-free package
Symbol
MTDK3S6R
Outline
SOT-363
Tr1
Tr 2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
BVDSS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current (Ta=25°C)
IDM
Total Power Dissipation
PD
ESD susceptibility
Operating Junction and Storage Temperature Range
Tj
Thermal Resistance, Junction-to-Ambient
Rth,ja
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. 200mW per element must not be exceeded
*3. Human body model, 1.5kΩ in series with 100pF
Limits
20
±8
100
400 *1
300 *2
350 *3
-55~+150
415
Unit
V
V
mA
mA
mW
V
°C
°C/W
MTDK3S6R
CYStek Product Specification