MTDK1S6R Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-CHANNEL MOSFET (dual transistors)

CYStech Electronics Corp.
N-CHANNEL MOSFET (dual transistors)
MTDK1S6R
Spec. No. : C320S6R-A
Issued Date : 2007.12.23
Revised Date :2008.01.25
Page No. : 1/ 7
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(2.5V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Equivalent Circuit
MTDK1S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Reverse Current
Power Dissipation
ESD susceptibility
Junction Temperature
Storage Temperature
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP
IDR
IDRP
Pd
Tj
Tstg
Limits
Unit
60
V
±20
V
200
mA
700 (Note 1)
mA
200
mA
700 (Note 1)
mA
300(total) (Note 2)
mW
1250 (Note 3)
V
150
°C
-55~+150
°C
Note : 1. Pulse test, pulse width≤300μs, duty≤2%
2. 200mW per element must not be exceeded.
3. Human body model, 1.5kΩ in series with 100pF
MTDK1S6R
CYStek Product Specification