MTDE5P10G6 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C885G6
Issued Date : 2012.11.21
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode MOSFET
MTDE5P10G6
BVDSS
ID
RDSON@VGS=-10V, ID=-1.4A
RDSON@VGS=-6V, ID=-1.2A
-100V
-1.4A
460mΩ(typ.)
480mΩ(typ.)
Description
The MTDE5P10G6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating package
Equivalent Circuit
MTDE5P10G6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
-100
Gate-Source Voltage
VGS
±20
Continuous Drain Current @VGS=-10V, TA=25 °C (Note 1)
ID
-1.4
Continuous Drain Current @VGS=-10V, TA=70 °C (Note 1)
ID
-1.1
Pulsed Drain Current (Note 2, 3)
IDM
-7
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
Pd
1.6
0.013
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+150
Thermal Resistance, Junction-to-Ambient (Note 1)
Rth,ja
78
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
V
A
W
W / °C
°C
°C/W
MTDE5P10G6
CYStek Product Specification