MTDB6N20H8 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C875H8
Issued Date : 2016.12.19
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTDB6N20H8
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=3A
RDSON(typ)@VGS=4.5V, ID=2A
200 V
8A
1.8A
285 mΩ
287 mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
MTDB6N20H8
G：Gate D：Drain S：Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
Package
Shipping
MTDB6N20H8-0-T6-G
DFN5×6
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDB6N20H8
CYStek Product Specification