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MTD30N10J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C887J3
Issued Date : 2015.04.23
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTD30N10J3
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=10A
100V
33A
31mΩ(typ)
39mΩ(typ)
Features
⢠Simple Drive Requirement
⢠Repetitive Avalanche Rated
⢠Fast Switching Characteristic
⢠RoHS compliant package
Symbol
MTD30N10J3
Outline
TO-252(DPAK)
Gï¼Gate
Dï¼Drain
Sï¼Source
G DS
Ordering Information
Device
MTD30N10J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13â reel
Product rank, zero for no rank products
Product name
MTD30N10J3
CYStek Product Specification
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