MTD20N10J3-K Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C741J3
Issued Date : 2012.08.27
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTD20N10J3 BVDSS
ID
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
• Pb-free lead plating and halogen-free package
RDSON(TYP)
VGS=10V, ID=30A
VGS=5V, ID=20A
100V
50A
17mΩ
19mΩ
Symbol
MTD20N10J3
Outline
TO-252AB
TO-252AA
G：Gate
D：Drain
S：Source
GDS
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
Power Dissipation
TC=25°C
TC=100°C
(Note 2)
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTD20N10J3
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
Unit
100
V
±20
50
35
A
150
30
45
mJ
22.5
60
W
32
-55~+175
°C
CYStek Product Specification