MTD20C03J4 Datasheet, PDF (1/14 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C914J4
Issued Date : 2017.07.31
Revised Date :
Page No. : 1/14
N & P-Channel Enhancement Mode Power MOSFET
MTD20C03J4
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
BVDSS
ID @ TC=25°C, VGS=10V(-10V)
ID @ TA=25°C, VGS=10V(-10V)
RDSON(MAX)@ VGS=10V(-10V)
RDSON(MAX)@ VGS=4.5V(-4.5V)
N-CH
30V
29.1A
7.5A
18mΩ
27mΩ
P-CH
-30V
-21.2A
-5.5A
36mΩ
60mΩ
Equivalent Circuit
MTD20C03J4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS
±20
-30
±20
V
Continuous Drain Current @ TC=25°C, VGS=10V(-10V for P-CH)
29.1 -21.2
Continuous Drain Current @ TC=100°C, VGS=10V(-10V)
Continuous Drain Current @ TA=25°C, VGS=10V(-10V)
Continuous Drain Current @ TA=70°C, VGS=10V(-10V)
20.6 -15.0
ID
7.5
-5.5
A
6.3
-4.6
Pulsed Drain Current *1
IDM
40
-40
Avalanche Current
IAS
15
-15
Avalanche Energy @ L=0.1mH, ID=15A(-15A for P-ch),RG=25Ω EAS 11.3
Repetitive Avalanche Energy @ L=0.05mH *2
EAR
2.5
11.3 _mJ
2.5
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
25
PD
W
12.5
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+175
°C
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
MTD20C03J4
CYStek Product Specification