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MTD190P10L3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C108L3
Issued Date : 2016.01.11
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTD190P10L3
BVDSS
ID @ TA=25°C, VGS=-10V
RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.5V, ID=-1A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
-100V
-2.2A
190mΩ (typ)
217mΩ (typ)
Equivalent Circuit
MTD190P10L3
G:Gate D:Drain
S:Source
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTD190P10L3-0-T3-G
Package
Shipping
SOT-223
(Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD190P10L3
CYStek Product Specification