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MTD190P10J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C108J3
Issued Date : 2015.12.29
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTD190P10J3
Features
BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-8A
RDS(ON)@VGS=-7V, ID=-8A
RDS(ON)@VGS=-4.5V, ID=-8A
⢠Low Gate Charge
⢠Simple Drive Requirement
⢠Pb-free Lead Plating & Halogen-free Package
-100V
-8.4A
194mΩ(typ)
204mΩ(typ)
244mΩ(typ)
Equivalent Circuit
MTD190P10J3
Outline
TO-252(DPAK)
Gï¼Gate
Dï¼Drain
Sï¼Source
G DS
Ordering Information
Device
Package
MTD190P10J3-0-T3-G
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13â reel
Product rank, zero for no rank products
Product name
MTD190P10J3
CYStek Product Specification
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