MTC8958G6 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C839G6
Issued Date : 2012.04.18
Revised Date : 2012.11.21
Page No. : 1/13
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC8958G6
BVDSS
ID
RDSON(TYP.)
N-CH
30V
6A(VGS=10V)
18mΩ(VGS=10V)
26mΩ(VGS=4.5V)
P-CH
-30V
-4.5A(VGS=-10 V)
41mΩ(VGS=-10V)
60mΩ(VGS=-4.5V)
Description
The MTC8958G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free package
Equivalent Circuit
MTC8958G6
Outline
TSOP-6
D2
S1
D1
G：Gate
S：Source
D：Drain
G2
S2
G1
MTC8958G6
CYStek Product Specification