MTC8402S6R Datasheet, PDF (1/12 Pages) Cystech Electonics Corp. – N- AND P-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date :
Page No. : 1/ 12
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTC8402S6R
Features
• ESD protected
• High speed switching
• Low-voltage drive
• Pb-free package
BVDSS
ID
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)5V
N-CH
60V
0.3A
1.6Ω
0.8Ω
P-CH
-50V
-0.18A
5Ω
6Ω
Equivalent Circuit
MTC8402S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C, VGS=10V(-10V)
Continuous Drain Current @TA=70 °C, VGS=10V(-10V)
Pulsed Drain Current (Note 1)
Power Dissipation @TA=25°C
Power Dissipation @TA=70°C
Operating Junction and Storage Temperature Range
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3.Surface mounted on minimum pad of FR-4 board, t≤5s.
Symbol
Limits
N-channel P-channel
Unit
BVDSS
60
VGS
±20
-55
V
±20
V
ID
0.3
-0.18
A
ID
0.24
-0.14
A
IDM
1.2
-0.8
A
0.30
PD
W
0.18
Tj; Tstg
-55~+150
°C
MTC8402S6R
CYStek Product Specification