MTC6604N6 Datasheet, PDF (1/12 Pages) Cystech Electonics Corp. – N- and P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
Page No. : 1/12
N- and P-Channel Enhancement Mode Power MOSFET
MTC6604N6 _BVDSS
ID
RDSON(TYP.)
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
N-CH
20V
4.3A(VGS=4.5V)
29mΩ(VGS=4.5V)
36mΩ(VGS=2.5V)
53mΩ(VGS=1.8V)
P-CH
-20V
-3.8A(VGS=-4.5 V)
42mΩ(VGS=-4.5V)
54mΩ(VGS=-2.5V)
64mΩ(VGS=-1.8V)
Equivalent Circuit
MTC6604N6
Outline
SOT-26
D2
S1
D1
G：Gate
S：Source
D：Drain
G2
S2
G1
Ordering Information
Device
MTC6604N6-0-T1-G
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTC6604N6
CYStek Product Specification