MTC6601G6 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C813G6
Issued Date : 2012.09.17
Revised Date : 2012.11.21
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTC6601G6
BVDSS
ID
RDSON(TYP.)
N-CH
30V
3.7A(VGS=10V)
44mΩ(VGS=10V)
50mΩ(VGS=4.5V)
70mΩ(VGS=2.5V)
P-CH
-30V
-3A(VGS=-10 V)
76mΩ(VGS=-10V)
94mΩ(VGS=-4.5V)
130mΩ(VGS=-2.5V)
Description
The MTC6601G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC6601G6
Outline
TSOP-6
D2
S1
D1
G：Gate
S：Source
D：Drain
G2
S2
G1
MTC6601G6
CYStek Product Specification