MTC3588N6_16 Datasheet, PDF (1/12 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date : 2016.10.11
Page No. : 1/12
N- And P-Channel Enhancement Mode Power MOSFET
MTC3588N6
BVDSS
ID @ TA=25 °C
RDSON(TYP.)
N-CH
14V
5.4A(VGS=4.5V)
17.6mΩ(VGS=4.5V)
24.7mΩ(VGS=2.5V)
P-CH
-14V
-3.6A(VGS=-4.5 V)
45.1mΩ(VGS=-4.5V)
65.6mΩ(VGS=-2.5V)
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3588N6
Outline
SOT-26
D2
S1
D1
G：Gate S：Source D：Drain
G2
S2
G1
Ordering Information
Device
MTC3588N6-0-T1-G
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC3588N6
CYStek Product Specification