MTC3588G6 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date :
Page No. : 1/13
N- And P-Channel Enhancement Mode Power MOSFET
MTC3588G6
BVDSS
ID @ TA=25 °C
RDSON(TYP.)
N-CH
14V
5.4A(VGS=4.5V)
17.6mΩ(VGS=4.5V)
24.7mΩ(VGS=2.5V)
39.5mΩ(VGS=1.8V)
67.3mΩ(VGS=1.5V)
P-CH
-14V
-3.6A(VGS=-4.5 V)
45.1mΩ(VGS=-4.5V)
65.6mΩ(VGS=-2.5V)
88.5mΩ(VGS=-1.8V)
154.3mΩ(VGS=-1.5V)
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3588G6
Outline
TSOP-6
D2
S1
D1
G：Gate S：Source D：Drain
G2
S2
G1
Ordering Information
Device
MTC3588G6-0-T1-G
Package
TSOP-6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC3588G6
CYStek Product Specification