MTC3586BDFA6 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2015.11.02
Revised Date :
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTC3586BDFA6
N-CH
P-CH
BVDSS
20V
-20V
ID
5A(VGS=4.5V)
-3.3A(VGS=-4.5 V)
27mΩ(VGS=4.5V) 78mΩ(VGS=-4.5V)
Description
RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V)
82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V)
The MTC3586BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3586BDFA6
Outline
DFN2×2-6L
G：Gate S：Source D：Drain
Ordering Information
Device
Package
MTC3586BDFA6-0-T1-G
DFN2×2-6L
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC3586BDFA6
CYStek Product Specification