MTC3504BJ4 Datasheet, PDF (1/11 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 1/11
N & P-Channel Enhancement Mode Power MOSFET
MTC3504BJ4
N-CH P-CH
BVDSS
40V
-40V
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
ID
RDSON(MAX)
12A
35mΩ
-9A
44mΩ
Equivalent Circuit
MTC3504BJ4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
Limits
N-channel P-channel
Unit
VDS
40
VGS ±20
-40
±20
V
ID
12
-9
ID
8
-6
A
IDM
48
-36
Pd
25
18
W
Tj, Tstg -55~+175
°C
MTC3504BJ4
CYStek Product Specification