MTBH0N25L3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C895L3
Issued Date : 2016.11.26
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
MTBH0N25L3
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
RDSON@VGS=10V, ID=1A
RDSON@VGS=4.5V, ID=1A
250V
1.2A
722mΩ (typ.)
732mΩ (typ.)
Equivalent Circuit
MTBH0N25L3
G：Gate D：Drain
S：Source
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTBH0N25L3-0-T3-G
Package
Shipping
SOT-223
(Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBH0N25L3
Preliminary
CYStek Product Specification