MTBD6N25J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C894J3
Issued Date : 2015.04.02
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTBD6N25J3
Features
BVDSS
ID@ VGS=10V, TC=25°C
ID@ VGS=10V, TA=25°C
VGS=10V, ID=5A
RDSON(TYP)
VGS=4.5V, ID=3A
 Low Gate Charge
 Simple Drive Requirement
 Pb-free lead plating and halogen-free package
250V
8A
1.5A
435mΩ
410mΩ
Equivalent Circuit
MTBD6N25J3
Outline
TO-252(DPAK)
G：Gate D：Drain
S：Source
G DS
Ordering Information
Device
Package
Shipping
MTBD6N25J3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBD6N25J3
CYStek Product Specification