MTBC7N10N3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – 100V N-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C886N3
Issued Date : 2012.11.14
Revised Date :
Page No. : 1/9
100V N-Channel Logic Level Enhancement Mode MOSFET
MTBC7N10N3
BVDSS
100V
ID
1A
RDSON(TYP)@VGS=10V, ID=1A 389mΩ
RDSON(TYP)@VGS=4.5V, ID=1A 413mΩ
RDSON(TYP)@VGS=4V, ID=1A 407mΩ
Features
• Lower gate charge.
• ESD protected.
• Pb-free lead plating and Halogen-free package.
Equivalent Circuit
MTBC7N10N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C, VGS=10V
TA=70°C, VGS=10V
Pulsed Drain Current
Power Dissipation
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
Unit
100
V
±20
V
1
A
0.8
4 (Note 1 & 2)
A
1 (Note 3)
W
0.54 (Note 4)
-55 ~ +150
°C
MTBC7N10N3
CYStek Product Specification