MTBB5N10L3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N -Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C593L3
Issued Date : 2010.07.07
Revised Date : 2011.12.09
Page No. : 1/8
N -Channel Logic Level Enhancement Mode MOSFET
MTBB5N10L3 ^BVDSS
100V
ID
5A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
RDSON@VGS=10V, ID=2A 125mΩ (typ.)
RDSON@VGS=4.5V, ID=1A 131mΩ (typ.)
Equivalent Circuit
MTBB5N10L3
Outline
SOT-223
D
G：Gate D：Drain
S：Source
S
D
G
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=5A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
MTBB5N10L3
Preliminary
Limits
Unit
100
±20
V
5
3
A
20
5
1.25
mJ
0.625
7.5
W
3
-55~+150
°C
CYStek Product Specification