MTBB0P10AJ3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C163J3
Issued Date : 2015.05.29
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTBB0P10AJ3 BVDSS
ID@VGS=-10V, TC=25°C
RDSON@VGS=-10V, ID=-4.7A
RDSON@VGS=-6V, ID=-1A
-100V
-10A
280mΩ (typ.)
298mΩ (typ.)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBB0P10AJ3
Outline
TO-252(DPAK)
G：Gate D：Drain
S：Source
G DS
Ordering Information
Device
MTBB0P10AJ3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBB0P10AJ3
CYStek Product Specification