MTBA6C15J4 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – N P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C938J4
Issued Date : 2014.10.15
Revised Date : 2014.10.28
Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTBA6C15J4
BVDSS
N-CH P-CH
150V -150V
Features
• Low gate charge
• Simple drive requirement
• Pb-free lead plating and halogen-free package
ID @VGS=10V(-10V)
RDSON(TYP)@VGS=10V(-10V)
RDSON(TYP)@VGS=4.5V(-4.5V)
9.3A
167mΩ
172mΩ
-7.1A
253mΩ
273mΩ
Equivalent Circuit
MTBA6C15J4
Outline
TO-252-4L
G：Gate D：Drain S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
150
VGS
±20
-150
±20
V
Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1)
Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1)
ID
9.3
6.6
-7.1
-5.0
Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note2)
Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note2)
IDSM
2
1.7
-1.5 A
-1.3
Pulsed Drain Current *1
(Note3) IDM
20
-20
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
(Note1)
37.5
PD
(Note1)
18.7
W
(Note2)
2.4
PDSM
(Note2)
1.7
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+175
°C
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
MTBA6C15J4
CYStek Product Specification