MTBA6C15H8 Datasheet, PDF (1/14 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C938H8
Issued Date : 2016.09.06
Revised Date : 2016.09.12
Page No. : 1/14
N- And P-Channel Enhancement Mode MOSFET
MTBA6C15H8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
N-CH
150V
2.4A
6.8A
172mΩ
178mΩ
P-CH
-150V
-2.0A
-5.8A
257mΩ
275mΩ
Equivalent Circuit
MTBA6C15H8
Outline
Pin 1
DFN5×6
G：Gate S：Source D：Drain
Ordering Information
Device
MTBA6C15H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA6C15H8
CYStek Product Specification