MTBA6C12J4 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – N P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C973J4
Issued Date : 2014.06.13
Revised Date : 2014.10.02
Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTBA6C12J4
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
BVDSS
ID @ VGS=10V(-10V)
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
120V
2A
176 mΩ
183 mΩ
P-CH
-120V
-1.6A
246 mΩ
276 mΩ
Equivalent Circuit
MTBA6C12J4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
120
VGS
±20
-120
±20
V
Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1)
8.0
-6.8
Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1)
Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note4)
ID
5.6
2.0
-4.8
-1.6 A
Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note4)
1.6
-1.3
Pulsed Drain Current *1
(Note3) IDM
10
-8
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
(Note1)
25
PD
(Note1)
12.5
W
(Note2)
2.4
PDSM
(Note2)
1.7
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+175
°C
MTBA6C12J4
CYStek Product Specification