MTBA5N10J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N -Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date :
Page No. : 1/7
N -Channel Logic Level Enhancement Mode Power MOSFET
MTBA5N10J3
BVDSS
100V
ID
10A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
RDSON(MAX)
150mΩ
Equivalent Circuit
MTBA5N10J3
Outline
TO-252
G：Gate D：Drain
S：Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTBA5N10J3
Limits
Unit
100
±30
V
10
7
A
40
12
7.2
mJ
3.6
35
W
15
-55~+175
°C
CYStek Product Specification