MTBA5N10FP Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C731FP
Issued Date : 2012.12.06
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTBA5N10FP
BVDSS
ID
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=10A
100V
10A
151 mΩ(typ)
165 mΩ(typ)
Description
The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Symbol
MTBA5N10FP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
MTBA5N10FP
GDS
CYStek Product Specification