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MTBA5N10FP-K Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C731FP
Issued Date : 2012.12.06
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTBA5N10FP
BVDSS
ID
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=10A
100V
10A
151 mΩ(typ)
165 mΩ(typ)
Description
The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠Insulating package, front/back side insulating voltage=2500V(AC)
⢠RoHS compliant package
Symbol
MTBA5N10FP
Outline
TO-220FP
Gï¼Gate
Dï¼Drain
Sï¼Source
MTBA5N10FP
GDS
CYStek Product Specification
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