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MTB9D0N10RE3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C169E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB9D0N10RE3
Features
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
100V
72A
10.9A
6.7 mΩ(typ)
Symbol
MTB9D0N10RE3
Outline
TO-220
Gï¼Gate Dï¼Drain Sï¼Source
GDS
Ordering Information
Device
MTB9D0N10RE3-0-UB-X
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB9D0N10RE3
CYStek Product Specification
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