MTB80N08J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB80N08J3
BVDSS
ID
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=4.5V, ID=10A
80V
15A
59.6 mΩ(typ)
60.5 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTB80N08J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTB80N08J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB80N08J3
CYStek Product Specification