MTB6D0N03BF3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : CA00F3
Issued Date : 2017.07.25
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB6D0N03BF3
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=40A
RDS(ON)@VGS=4.5V, ID=20A
30V
58A
11A
8.2mΩ(typ)
10.6mΩ(typ)
Symbol
MTB6D0N03BF3
Outline
TO-263
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB6D0N03BF3-0-T7-X
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB6D0N03BF3
CYStek Product Specification