MTB60A06DH8 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C708H8
Issued Date : 2016.05.23
Revised Date : 2016.05.25
Page No. : 1/ 9
Dual N-Channel Enhancement Mode Power MOSFET
MTB60A06DH8
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=5A
RDS(ON)@VGS=4.5V, ID=5A
60V
15A
9.5A
4.5A
3.6A
34mΩ(typ)
38mΩ(typ)
Equivalent Circuit
MTB60A06DH8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTB60A06DH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB60A06DH8
CYStek Product Specification