MTB60A06AQ8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C708Q8
Issued Date : 2017.01.25
Revised Date : 2017.01.26
Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
MTB60A06AQ8
BVDSS
ID@VGS=10V, TA=25°C
RDSON@VGS=10V, ID=5A
RDSON@VGS=4.5V, ID=3A
60V
4.3A
34.6mΩ(typ)
38.5mΩ(typ)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual N-ch MOSFET package
• Pb-free lead plating & Halogen-free package
Equivalent Circuit
MTB60A06AQ8
Outline
SOP-8
D2
D2
D1
D1
G：Gate
S：Source
D：Drain
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTB60A06AQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB60A06AQ8
CYStek Product Specification