MTB5D0P03Q8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C965Q8
Issued Date : 2014.12.03
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03Q8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free and halogen-free package
BVDSS
ID@VGS=-10V, TA=25°C
ID@VGS=-4.5V, TA=25°C
ID@VGS=-10V, TC=25°C
ID@VGS=-4.5V, TC=25°C
RDSON@VGS=-10V, ID=-20A
RDSON@VGS=-4.5V, ID=-17A
-30V
-20A
-16A
-28A
-22A
3.0mΩ(typ)
4.2mΩ(typ)
Equivalent Circuit
MTB5D0P03Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTB5D0P03Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03Q8
CYStek Product Specification