MTB5D0P03J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03J3
BVDSS
ID @VGS=-10V
RDS(ON)@VGS=-10V, ID=-25A
RDS(ON)@VGS=-4.5V, ID=-10A
-30V
-88A
3.7mΩ(typ)
5.1mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & halogen-free package
Equivalent Circuit
MTB5D0P03J3
Outline
TO-252(DPAK)
G：Gate D：Drain
S：Source
G DS
Ordering Information
Device
MTB5D0P03J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03J3
CYStek Product Specification