MTB5D0P03H8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03H8
BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
VGS=-10V, ID=-20A
RDSON(TYP)
VGS=-4.5V, ID=-17A
-30V
-90A
-22A
3.2mΩ
5.1mΩ
Symbol
MTB5D0P03H8
Outline
Pin 1
EDFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTB5D0P03H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03H8
CYStek Product Specification