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MTB50N10E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB50N10E3
BVDSS
Features
⢠Low Gate Charge
⢠Simple Drive Requirement
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=25A
RDS(ON)@VGS=5V, ID=20A
⢠Repetitive Avalanche Rated
⢠Fast Switching Characteristic
⢠Pb-free lead plating and RoHS compliant package
100V
29A
32mΩ (typ)
33mΩ (typ)
Symbol
MTB50N10E3
Outline
TO-220
Gï¼Gate
Dï¼Drain
Sï¼Source
G DS
Ordering Information
Device
MTB50N10E3-0-UB-X
Package
Shipping
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB50N10E3
CYStek Product Specification
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