MTB40N06E3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C708E3
Issued Date : 2011.12.26
Revised Date :
Page No. : 1/7
N -Channel Enhancement Mode Power MOSFET
MTB40N06E3
BVDSS
60V
ID
26A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
RDSON(TYP)@VGS=10V,ID=10A 35mΩ
RDSON(TYP)@VGS=4.5V,ID=8A 40mΩ
Equivalent Circuit
MTB40N06E3
Outline
TO-220
G：Gate
D：Drain
S：Source
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=26A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
MTB40N06E3
Limits
Unit
60
±20
V
26
16
A
50
26
34
mJ
5
50
W
20
-55~+150
°C
CYStek Product Specification