MTB30P06KJ3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

Spec. No. : C104J3
CYStech Electronics Corp.
Issued Date : 2015.07.16
Revised Date :
P-Channel Enhancement Mode Power MOSFET
MTB30P06KJ3
Features
BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-6A
RDS(ON)@VGS=-4.5V, ID=-4A
RDS(ON)@VGS=-4V, ID=-3A
• Low Gate Charge
• Simple Drive Requirement
• ESD Protected Gate
• Pb-free Lead Plating & Halogen-free Package
-60V
-23.6A
23mΩ(typ)
37mΩ(typ)
44mΩ(typ)
Equivalent Circuit
MTB30P06KJ3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTB30P06KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB30P06KJ3
CYStek Product Specification