MTB30P06KFP Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C104FP
Issued Date : 2016.01.04
Revised Date : 2016.01.29
Page No. : 1/ 8
P-Channel Enhancement Mode Power MOSFET
MTB30P06KFP BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-6A
Features
RDS(ON)@VGS=-4.5V, ID=-4A
• Low On Resistance
RDS(ON)@VGS=-4V, ID=-3A
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• ESD protected gate
• RoHS compliant package
-60V
-24A
-5.8A
26.1 mΩ(typ)
38.1 mΩ(typ)
43.3 mΩ(typ)
Symbol
MTB30P06KFP
Outline
TO-220FP
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTB30P06KFP-0-UB-S
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB30P06KFP
CYStek Product Specification