MTB30N06V8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N -Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C699V8
Issued Date : 2012.03.20
Revised Date : 2012.03.26
Page No. : 1/9
N -Channel Logic Level Enhancement Mode Power MOSFET
MTB30N06V8 BVDSS
ID
VGS=10V, ID=6.8A
RDSON(TYP)
VGS=4.5V, ID=4A
60V
6.8A
24mΩ
28mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Equivalent Circuit
MTB30N06V8
Outline
DFN3×3
Pin 1
G：Gate D：Drain S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
ID
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current *1
IDM
Avalanche Energy @ L=0.1mH, ID=20A, VDD=30V
EAS
Total Power Dissipation @TC=25℃
Total Power Dissipation @TA=25℃
PD
Operating Junction and Storage Temperature Range
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature.
*2. Duty cycle ≤ 1%.
*3. Surface mounted on a 1 in² pad of FR-4 board with 2oz copper, t≤10s.
MTB30N06V8
Limits
Unit
60
±20
V
13
8.2
6.8
A
4.3
30
40
mJ
9
W
2.5
-55~+150
°C
CYStek Product Specification