MTB300N10L3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C580L3
Issued Date : 2014.12.24
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB300N10L3
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDSON@VGS=10V, ID=2.9A
RDSON@VGS=5V, ID=2.9A
100V
1.9A
5.0A
290mΩ(typ)
302mΩ(typ)
Features
• Single Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTB300N10L3
Outline
SOT-223
G：Gate D：Drain S：Source
D
S
D
G
Ordering Information
Device
MTB300N10L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB300N10L3
CYStek Product Specification