MTB25C04J4 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C955J4
Issued Date : 2015.06.16
Revised Date :
Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTB25C04J4
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
40V
5.2A
21A
20.9 mΩ
30.1 mΩ
P-CH
-40V
-4.9A
-20A
31.3 mΩ
46.2 mΩ
Equivalent Circuit
MTB25C04J4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
40
VGS
±20
-40
±20 ^V
Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1)
21
-20
Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1)
Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note4)
Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note4)
ID
14.9 -14.1
5.2
-4.9 _A
4.2
-3.9
Pulsed Drain Current *1
(Note3)
IDM
30
-30
Avalanche Current
IAS
6.5
-9.3
Avalanche Energy @ L=0.5mH, VGS=10V(-10V), IAS=6.5A(-9.3A) EAS 10.6 21.6 mJ
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
(Note1)
25
PD
(Note1)
12.5
W
(Note2)
2.4
PDSM
(Note2)
1.7
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+175
°C
MTB25C04J4
CYStek Product Specification