MTB20N06KFP Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C103FP
Issued Date : 2015.12.27
Revised Date : 2016.03.29
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB20N06KFP BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=8A
Features
RDS(ON)@VGS=4.5V, ID=6A
• Low On Resistance
RDS(ON)@VGS=4V, ID=4A
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• ESD protected gate
• RoHS compliant package
60V
25A
6.9A
13.4 mΩ(typ)
17.3 mΩ(typ)
18.9 mΩ(typ)
Symbol
MTB20N06KFP
Outline
TO-220FP
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTB20N6KFP-0-UB-S
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB20N06KFP
CYStek Product Specification