MTB20C06KQ8 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTB20C06KQ8
BVDSS
ID@VGS=10V(-10V)
RDSON(TYP.)@VGS=10V(-10V)
RDSON(TYP.)@VGS=4.5V(-4.5V)
RDSON(TYP.)@VGS=4V(-4V)
N-CH
60V
6A
18.1mΩ
20.5mΩ
21.7mΩ
P-CH
-60V
-5A
27.9mΩ
41.4mΩ
47.8mΩ
Description
The MTB20C06KQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• ESD protected gate
• Common drain structure
• Pb-free lead plating and halogen-free package
Ordering Information
Device
MTB20C06KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20C06KQ8
CYStek Product Specification